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http://nopr.niscpr.res.in/handle/123456789/29764Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Gopchandran, KG | - |
| dc.contributor.author | Joseph, Benny | - |
| dc.contributor.author | Abraham, Johny T | - |
| dc.contributor.author | Koshy, Peter | - |
| dc.contributor.author | Vaidyan, V K | - |
| dc.date.accessioned | 2014-11-07T05:19:35Z | - |
| dc.date.available | 2014-11-07T05:19:35Z | - |
| dc.date.issued | 1997-12 | - |
| dc.identifier.issn | 0975-1017 (Online); 0971-4588 (Print) | - |
| dc.identifier.uri | http://hdl.handle.net/123456789/29764 | - |
| dc.description | 282-286 | en_US |
| dc.description.abstract | The structure and morphology of In2O3 films prepared by direct and indirect oxidation mechanisms are reported. XRD studies of In2O3 films prepared by annealing of vacuum deposited indium films have shown a <111> texture while the texture of reactively deposited (directly oxidized) films has been found sensitive to deposition conditions. SEM observations show porosity in films obtained by annealing and smooth polycrystalline nature for reactively deposited films. Electrical and optical properties of directly oxidized films are found to be superior to those of indirectly heated films. | en_US |
| dc.language.iso | en_US | en_US |
| dc.publisher | NISCAIR-CSIR, India | en_US |
| dc.rights |  CC Attribution-Noncommercial-No Derivative Works 2.5 India | en_US |
| dc.source | IJEMS Vol.04(6) [December 1997] | en_US |
| dc.title | Characterization of directly and indirectly oxidized thin indium films | en_US |
| dc.type | Article | en_US |
| Appears in Collections: | IJEMS Vol.04(6) [December 1997] | |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| IJEMS 4(6) 282-286.pdf | 1.63 MB | Adobe PDF | View/Open |
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