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http://nopr.niscpr.res.in/handle/123456789/29788| Title: | Oxidation mechanism involved in thin tin films |
| Authors: | Abraham, Johny T Thomas, P V Gopchandran, K G Joseph, Benny Vaidyan, V K |
| Issue Date: | Jun-1996 |
| Publisher: | NISCAIR-CSIR, India |
| Abstract: | Tin in thin film form reaches its highest oxidation state SnO2 either through direct or indirect phase transformation. The direct or indirect transformation depends on whether SnO is in the alpha or beta phase, respectively. When SnO2 was reactively deposited, SnO2 films formed through a direct transformation exhibited high conductivity and optical transmission than those formed through an indirect phase transformation. It has been observed that a direct transformation helps to reduce the substrate temperature required for the reactive deposition of SnO2. |
| Page(s): | 109-113 |
| ISSN: | 0975-1017 (Online); 0971-4588 (Print) |
| Appears in Collections: | IJEMS Vol.03(3) [June 1996] |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| IJEMS 3(3) 109-113.pdf | 1.1 MB | Adobe PDF | View/Open |
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