<span style="font-size:11.0pt;line-height:115%; font-family:"Calibri","sans-serif";mso-ascii-theme-font:minor-latin;mso-fareast-font-family: "Times New Roman";mso-fareast-theme-font:minor-fareast;mso-hansi-theme-font: minor-latin;mso-bidi-font-family:Arial;mso-ansi-language:EN-US;mso-fareast-language: EN-US;mso-bidi-language:AR-SA">Fabrication of p+ implanted shallow junctions with TiSi₂ in Si MOS structure</span>

Abstract

<span style="font-size:11.0pt;line-height:115%; font-family:" calibri","sans-serif";mso-ascii-theme-font:minor-latin;mso-fareast-font-family:="" "times="" new="" roman";mso-fareast-theme-font:minor-fareast;mso-hansi-theme-font:="" minor-latin;mso-bidi-font-family:arial;mso-ansi-language:en-us;mso-fareast-language:="" en-us;mso-bidi-language:ar-sa"="">The paper describes junction formation in <i style="mso-bidi-font-style:normal">p</i>-Si by p⁺ ion implantation with TiSi₂ as contact material p⁺ implanted shallow junctions with TiSi₂ have been formed by three different processes Implantation (i) through Ti layer, (ii) through TiSi₂ and (iii) directly into crystalline Si. A characterization of TiSi₂ has been carried out using X-ray diffraction and X-ray photoelectron spectroscopy. <i style="mso-bidi-font-style: normal">1-V</i> and <i style="mso-bidi-font-style:normal">C-V</i> characteristics of the junctions show that the first type of structure has the best properties, i.e., lowest ideality factor (<i style="mso-bidi-font-style: normal">n</i>= 1.47-1.95) and dark current. The first process yields best devices because of lower defect concentration near the junction formation by ion implantation.</span>