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http://nopr.niscpr.res.in/handle/123456789/29797| Title: | Pulsed laser deposition of ZnSe thin film on Si for heterojunction studies |
| Authors: | Ali, S T Bhattacharya, P Bose, D N |
| Issue Date: | Aug-1996 |
| Publisher: | NISCAIR-CSIR, India |
| Abstract: | ZnSe films were deposited on p-Si and glass substrates by pulsed laser evaporation (PLE) and also by thermal evaporation (TE) at two substrate temperatures (Ts) of 300 and 523 K. Films deposited on glass were amorphous at 300 K and polycrystalline zinc-blende at 523 K. X-ray photoelectron spectroscopy (XPS) studies showed that while both types of films deposited on Si were Zn rich, the PLE films had better stoichiometry for Ts = 300 K and TE films for Ts = 523 K. n-ZnSe/p-Si heterojunctions fabricated by PLE and TE were characterized by current voltage (I-V) and capacitance-voltage (C- V) techniques from which the ideality factor n, reverse saturation current density Jo and relative dielectric constants ϵr were determined. These measurements showed that films with better stoichiometry resulted in heterojunction with lower n and Jo. |
| Page(s): | 152-157 |
| ISSN: | 0975-1017 (Online); 0971-4588 (Print) |
| Appears in Collections: | IJEMS Vol.03(4) [August 1996] |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| IJEMS 3(4) 152-157.pdf | 456.48 kB | Adobe PDF | View/Open |
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