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http://nopr.niscpr.res.in/handle/123456789/29809Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Chaudhari, G N | - |
| dc.contributor.author | Manorarna, S V | - |
| dc.contributor.author | Rao, V J | - |
| dc.date.accessioned | 2014-11-07T09:06:04Z | - |
| dc.date.available | 2014-11-07T09:06:04Z | - |
| dc.date.issued | 1996-10 | - |
| dc.identifier.issn | 0975-1017 (Online); 0971-4588 (Print) | - |
| dc.identifier.uri | http://hdl.handle.net/123456789/29809 | - |
| dc.description | 215-218 | en_US |
| dc.description.abstract | The different phases formed at the ZnSe/GaAs interface and Schottky barrier height have been studied by low angle X-ray diffraction, current-voltage and capacitance-voltage characteristics. It has been shown that three phases namely Ga2Se3, As2Se3 and Zn3As2 are formed after annealing the ZnSe films on GaAs at different temperatures. The diode characteristics improved significantly and the barrier height is found to increase with increasing annealing temperature. | en_US |
| dc.language.iso | en_US | en_US |
| dc.publisher | NISCAIR-CSIR, India | en_US |
| dc.rights |  CC Attribution-Noncommercial-No Derivative Works 2.5 India | en_US |
| dc.source | IJEMS Vol.03(5) [October 1996] | en_US |
| dc.title | Study of the interface of ZnSe/GaAs(110) heterostructures | en_US |
| dc.type | Article | en_US |
| Appears in Collections: | IJEMS Vol.03(5) [October 1996] | |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| IJEMS 3(5) 215-218.pdf | 317.45 kB | Adobe PDF | View/Open |
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