Effect of ZnMn₂O₄ thickness on its resistive switching characteristics

Abstract

In this paper, the ZnMn₂O₄ resistive switching characteristics are investigated for different layer thicknesses. The ZnMn₂O₄ films, with a thickness of 180 nm, 255 nm, 340 nm, exhibited bipolar resistive switching behaviours. It is observed that the RESET voltage of Ag/ZnMn₂O₄/p⁺-Si devices increase with the increase of ZnMn₂O₄ layer thickness and the SET voltage shows weak dependence on film thickness. The 255 nm thick ZnMn₂O₄film is proved to have the best read/write endurance characteristics, in which it shows steady and reproducible bipolar resistive switching behaviours after 1000 switching cycles. However, large fluctuation of resistance is observed obviously for the device with 180 nm thick ZnMn₂O₄ film and that with 340 nm thickness shows weak resistive switching ability after 1000 switching cycles.