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| Title | Author(s) | Source | Page(s) |
|---|---|---|---|
| Effect of frequency and bias voltage on the electrical and dielectric properties of atomic layer deposited Al/Al2O3/ p-Si MOS structure at room temperature | Philip, Anu; Thomas, Subin; Nisha, R; Kumar, K Rajeev | IJPAP Vol.53(07) [July 2015] | 464-469 |
| Effect of Si on the dielectric properties of Nix Zn1-x FeĀ2O4 as a function of composition and frequency | Uzma, G | IJPAP Vol.53(04) [April 2015] | 271-273 |
| Dielectric relaxation in double-perovskite Ca2GdTaO6 | Ghosh, Binita; Dutta, Alo; Brajesh, Kumar; Sinha, T P | IJPAP Vol.53(02) [February 2015] | 125-133 |