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http://nopr.niscpr.res.in/handle/123456789/30265| Title: | Current-conduction mechanism in Au/n-4H-SiC Schottky barrier diodes |
| Authors: | Kaya, A Sevgili, Ö Altındal, Ş Öztürk, M K |
| Keywords: | Au/n-4H-SiC diodes;Ideality factor;Barrier inhomogeneities;Gaussian distribubition;Barrier heights |
| Issue Date: | Jan-2015 |
| Publisher: | NISCAIR-CSIR, India |
| Abstract: | Au/n-4H-SiC Schottky
barrier diodes (SBDs)
were fabricated and their temperature and voltage dependence of saturation
current (Io), ideality
factor (n), barrier height (Φbo),
series and shunt resistances (Rs, Rsh) values were obtained by using current-voltage (I-V)
measurements in the temperature range 110-400 K. The values of Io, n and Φbo were found as 3.00  10-14A, 3.41 and 0.39 eV at 110 K and
7.7510-7A, 1.64 and 0.90 eV at 400 K,
respectively. The Φbo-q/2kT plot was drawn to
obtain an evidence of a Gaussian distribution (GD) of the barrier heights
(BHs). The mean BH (Φbo)
and standard deviation (σo) values have been extracted from the
intercept and slope of this plot is as 1.089 eV and 0.127 V, respectively. The Φbo and Richardson constant (A*)
values were obtained from the modified Ln(Io/T2)-(q2σs2/2k2T2)
versus q/kT plot as 1.093 eV and 160.6 A.cm-2K-2 which can be considered as close to the
theoretical value 146 A.cm-2K-2, respectively. Voltage dependent activation
energy (Ea) value was also
obtained from the In(Io/T2)-q/kT and In(Io/T2)-q/nkT plots in the voltage
range 0.05-0.50 V with 0.05 V steps and it is found that it decreases with
increasing voltage. The temperature dependence of I-V characteristics in
Au/n-4H-SiC diodes
can be successfully explained on the basis of a TE mechanism with GD of
the BHs.
|
| Page(s): | 56-65 |
| ISSN: | 0975-1041 (Online); 0019-5596 (Print) |
| Appears in Collections: | IJPAP Vol.53(01) [January 2015] |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| IJPAP 53(1) 56-65.pdf | 464.07 kB | Adobe PDF | View/Open |
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