Please use this identifier to cite or link to this item: http://nopr.niscpr.res.in/handle/123456789/35508
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dc.contributor.authorBiswas, Papiya-
dc.contributor.authorRamavath, Pandu-
dc.contributor.authorJohnson, Roy-
dc.contributor.authorRavi, Kurisetty Venkata-
dc.date.accessioned2016-09-29T06:57:10Z-
dc.date.available2016-09-29T06:57:10Z-
dc.date.issued2016-09-
dc.identifier.issn0975-0991 (Online); 0971-457X (Print)-
dc.identifier.urihttp://nopr.niscair.res.in/handle/123456789/35508-
dc.description400-404en_US
dc.description.abstractRecent developments in Chemical Vapour Deposition (CVD) processing with its inherent advantages provide a feasible route for producing high quality optically transparent ceramic materials. CVD process feasibility of the reaction between Zn and H2S in obtaining optical quality ZnS deposits are evaluated with respect to the free energy requirements. Rayleigh number (Ra) of 106 corresponding to laminar flow indicated optimum flow velocities during CVD processing. Deposits show desirable thickness uniformity of 0.55% per cm and were found to have a phase pure ZnS XRD phase. EBSD patterns exhibited a highly oriented columnar ZnS grains and the specimens have shown the theoretical transmission values in the IR ranges.en_US
dc.language.isoen_USen_US
dc.publisherNISCAIR-CSIR, Indiaen_US
dc.rights CC Attribution-Noncommercial-No Derivative Works 2.5 Indiaen_US
dc.sourceIJCT Vol.23(5) [September 2016]en_US
dc.subjectChemical vapour depositionen_US
dc.subjectIR transparent ZnSen_US
dc.subjectRayleigh numberen_US
dc.subjectFree energyen_US
dc.subjectTransport phenomenonen_US
dc.titleFabrication of IR transparent zinc sulphide plate by chemical vapour deposition (CVD)en_US
dc.typeArticleen_US
Appears in Collections:IJCT Vol.23(5) [September 2016]

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