Please use this identifier to cite or link to this item: http://nopr.niscpr.res.in/handle/123456789/41383
Full metadata record
DC FieldValueLanguage
dc.contributor.authorDas, Pradyut K-
dc.contributor.authorSinha, Sutapa-
dc.contributor.authorGhosh, Barindra K-
dc.date.accessioned2017-04-21T06:45:05Z-
dc.date.available2017-04-21T06:45:05Z-
dc.date.issued1996-07-
dc.identifier.issn0975-0975(Online); 0376-4710(Print)-
dc.identifier.urihttp://nopr.niscair.res.in/handle/123456789/41383-
dc.description586-590en_US
dc.description.abstractThe reaction of facial-[OsA3]- (3 [A = anion of arylazo oxime (HA, 1)] with VO(acac)2 furnishes hetero-bimetallic complexes of the type [OsA3VO(acac)] (4). Replacement of acac by neutral N,N donors (B) like 2,2' -bipyridine and 1, 10-phenanthroline gives cationic species of the type [OsA3VO(B)]+ isolated as perchlorate salt 5. Extrusion of 4 and 5 with NaOH reverts to mononuclear 3. All the complexes have been characterized using their spectroscopic, magnetic and physicochemical results. A1: 1 correspondence in the IR spectra of 4 (A = A2) and corresponding well-characterized iron-vanadium analogue, [FeA23 VO(acac)] suggests cognate structure 6. The new binuclear complexes are one-electron paramagnets and VO2 + core is EPR-active. The g-values suggest the occupancy of the unpaired electron in dxy orbital. The complexes show a number of charge-transfer transitions in 200-700 nm region and exhibit nearly reversible osmiurm(III)-osmium(II) couple.en_US
dc.language.isoen_USen_US
dc.publisherNISCAIR-CSIR, Indiaen_US
dc.rights CC Attribution-Noncommercial-No Derivative Works 2.5 Indiaen_US
dc.sourceIJC-A Vol.35A(07) [July 1996]en_US
dc.titleSynthesis, characterization and electrochemical studies of oximato-bridged binuclear osmium(II)-oxovanadium(IV) complexesen_US
dc.typeArticleen_US
Appears in Collections:IJC-A Vol.35A(07) [July 1996]

Files in This Item:
File Description SizeFormat 
IJCA 35A(7) 586-590.pdf992.72 kBAdobe PDFView/Open


Items in NOPR are protected by copyright, with all rights reserved, unless otherwise indicated.