Please use this identifier to cite or link to this item: http://nopr.niscpr.res.in/handle/123456789/46758
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dc.contributor.authorSingh, K-
dc.contributor.authorRai, J P-
dc.date.accessioned2019-03-26T09:16:00Z-
dc.date.available2019-03-26T09:16:00Z-
dc.date.issued1989-06-
dc.identifier.issn0975-0975(Online); 0376-4710(Print)-
dc.identifier.urihttp://nopr.niscair.res.in/handle/123456789/46758-
dc.description557-560en_US
dc.description.abstractThallium-doped zinc selenide semiconductor electrode has been prepared by electrochemical code-position: Such doped electrodes exhibit photoresponsiveness significantly higher than that of zinc selenide electrodeposits prepared and tested under similar experimental conditions. Capacitance measurements and current-voltage behaviour in dark and under illumination in conjunction with photoaction spectral studies have been used for the characterization of Tl-doped zinc selenide electrode. The results indicate that incorporation of thallium modifies zinc selenide characteristics so as to enable it to exhibit improved photoelectro-convertibility.en_US
dc.language.isoen_USen_US
dc.publisherNISCAIR-CSIR, Indiaen_US
dc.rights CC Attribution-Noncommercial-No Derivative Works 2.5 Indiaen_US
dc.sourceIJC-A Vol.28A(07) [July 1989]en_US
dc.titleElectrosynthesis and photoelectrochemical characterization of zinc selenide doped with thalliumen_US
dc.typeArticleen_US
Appears in Collections:IJC-A Vol.28A(07) [July 1989]

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