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dc.contributor.authorKumar, Sudhir-
dc.contributor.authorSharon, Maheshwar-
dc.contributor.authorJawalekar, S R-
dc.date.accessioned2019-03-26T11:11:55Z-
dc.date.available2019-03-26T11:11:55Z-
dc.date.issued1989-09-
dc.identifier.issn0975-0975(Online); 0376-4710(Print)-
dc.identifier.urihttp://nopr.niscair.res.in/handle/123456789/46810-
dc.description752-756en_US
dc.description.abstractPhotoelectrochemical properties of thin film of Pb3O4 prepared by thermal annealing of electrodeposited thin film of PbO2 have been studied. Energy levels of band diagram of Pb3O4 are experimentally found to be 4.26 eV and 6.40 eV for conduction and valence bands respectively. It is observed that Fe(CN)6-3/Fe(CN)6 -4 electrolyte gives the maximum photo-current with this material. Effect of thickness of thin film of Pb3O4 on the photoconversion efficiency has been calculated. A maximum efficiency of 0.21 % with a fill factor 0.4 has been observed with 0.6 micron thick film. Prolonged illumination of the electrode results in decrease of photo-current suggesting the unstability of film over a long period.en_US
dc.language.isoen_USen_US
dc.publisherNISCAIR-CSIR, Indiaen_US
dc.rights CC Attribution-Noncommercial-No Derivative Works 2.5 Indiaen_US
dc.sourceIJC-A Vol.28A(09) [September 1989]en_US
dc.titlePhoto electrochemical studies on thin film Pb3O4 photoelectrodesen_US
dc.typeArticleen_US
Appears in Collections:IJC-A Vol.28A(09) [September 1989]

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