Please use this identifier to cite or link to this item:
http://nopr.niscpr.res.in/handle/123456789/46877Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Sharon, Maheshwar | - |
| dc.contributor.author | Prasad, B M | - |
| dc.contributor.author | Basavaswaran, K | - |
| dc.date.accessioned | 2019-03-28T05:13:23Z | - |
| dc.date.available | 2019-03-28T05:13:23Z | - |
| dc.date.issued | 1989-11 | - |
| dc.identifier.issn | 0975-0975(Online); 0376-4710(Print) | - |
| dc.identifier.uri | http://nopr.niscair.res.in/handle/123456789/46877 | - |
| dc.description | 935-941 | en_US |
| dc.description.abstract | A new technique to measure surface conductivity has been developed. This technique which can be used with either a thin film or a pellet can also provide information on (i) flat-band potential at a desired pH, (ii) barrier height developed at the interface of semiconductor-electrolyte at any desired pH and (iii) flat-band potential at a desired surface charge present at the semiconductor. A model has been developed to explain the mechanism of surface conductivity of a semiconductor, such as ɑ-Fe2O3 or n-SnS or p-SnSe. | en_US |
| dc.language.iso | en_US | en_US |
| dc.publisher | NISCAIR-CSIR, India | en_US |
| dc.rights |  CC Attribution-Noncommercial-No Derivative Works 2.5 India | en_US |
| dc.source | IJC-A Vol.28A(11) [November 1989] | en_US |
| dc.title | A new technique to measure flat band potential and barrier height at a desired surface charge of n- and p-semiconductors | en_US |
| dc.type | Article | en_US |
| Appears in Collections: | IJC-A Vol.28A(11) [November 1989] | |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| IJCA 28A(11) 935-941.pdf | 3.43 MB | Adobe PDF | View/Open |
Items in NOPR are protected by copyright, with all rights reserved, unless otherwise indicated.