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dc.contributor.authorMohanta, A-
dc.contributor.authorBehera, D-
dc.date.accessioned2009-09-02T06:50:18Z-
dc.date.available2009-09-02T06:50:18Z-
dc.date.issued2009-09-
dc.identifier.issn0975-1041 (Online); 0019-5596 (Print)-
dc.identifier.urihttp://hdl.handle.net/123456789/5971-
dc.description676-680en_US
dc.description.abstractThe simultaneous incorporation of Ga3+ and Zn2+ to the Cu-site of YBa2Cu3O7-δ has been analyzed for microstructural and electrical properties. Temperature-dependent electrical resistivity, X-ray diffraction and SEM analysis of a set of YBa2(Cu0.95Zn0.05-xGax)3O7-y films prepared by solid state reaction technique have been investigated to study the substitutional effects of Ga and Zn at chain and plane site of Cu, respectively. The redistribution of charges in the superconducting system due to oxygen content and the resistance of the weak-links related inhomogeneities give rise to Tc degradation and dual values of exponents in the Tc0 region. The exponent values for fluctuation conductivity in the Tc0 region decrease with increase of substitution concentration. The dual exponent character shows that the intergranular weak links develop more resistance with increasing impurities.en_US
dc.language.isoen_USen_US
dc.publisherCSIRen_US
dc.sourceIJPAP Vol.47(09) [September 2009]en_US
dc.subjectSuperconductorsen_US
dc.subjectExcess conductivityen_US
dc.subjectCoherence transitionen_US
dc.titleEffect of Ga and Zn doping on coherent transition of YBCO superconductoren_US
dc.typeArticleen_US
Appears in Collections:IJPAP Vol.47(09) [September 2009]

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