Please use this identifier to cite or link to this item: http://nopr.niscpr.res.in/handle/123456789/62449
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dc.contributor.authorShikha, Deep-
dc.contributor.authorMehta, Vimal-
dc.contributor.authorKumar, Mahesh-
dc.contributor.authorChauhan, R P-
dc.date.accessioned2023-08-16T12:17:37Z-
dc.date.available2023-08-16T12:17:37Z-
dc.date.issued2023-08-
dc.identifier.issn0971-4588 (Print); 0975-1017 (Online)-
dc.identifier.urihttp://nopr.niscpr.res.in/handle/123456789/62449-
dc.description365-368en_US
dc.description.abstractAn X-ray diffractometer for structural, a UV-VIS Spectrophotometer for optical, and a unique aluminium sample holder intended to examine the electrical properties of the synthesized SnSe thin films on non-conductive glass substrates in an alkaline medium were used. Light shining through a transparent glass window illuminated the samples to examine their electrical (photoconductivity) properties. The XRD results show that all of the films are orthorhombic crystals. The concentration of the precursor affects microstructural characteristics such as micro strain, crystallite size, and dislocation density. SnSe thin films' optical bandgap is measured using absorbance measurements. Semiconducting properties are confirmed by measuring the electrical conductivity, which reaches its highest value at the optimal precursor concentration. The as-grown SnSe films exhibit tunable photo response properties, which boost the practical application of the films in photovoltaic and solar cells.en_US
dc.language.isoenen_US
dc.publisherNIScPR-CSIR, Indiaen_US
dc.sourceIJEMS Vol.30(3) [June 2023]en_US
dc.subjectChemical bath depositionen_US
dc.subjectThin Filmsen_US
dc.subjectTin selenideen_US
dc.subjectPrecursoren_US
dc.subjectX-Ray Diffractometer (XRD)en_US
dc.titleTailoring the Properties of Nanocrystalline Tin(II) Selenide Films through Precursor Concentration Modulationen_US
dc.typeArticleen_US
dc.identifier.doihttps://doi.org/10.56042/ijems.v30i3.3666en_US
Appears in Collections:IJEMS Vol.30(3) [June 2023]

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