Investigation of α-Fe2O3 and Cr doped α-Fe2O3 Based Nano-Film as Resistive Switching Material for ReRAM Device Application

Abstract

Ferric oxide (α-Fe2O3) based nanoparticles show a vast number of applications along with resistive switching. In the recent study, we synthesized α-Fe2O3 nanoparticles and Cr3+ doped α-Fe2O3 to see the variation in the resistiveswitching property with chromium doping. XRD and FESEM characterizations have been carried out to confirm the structural and morphological properties of both α-Fe2O3 and CrFeO3 nanoparticles. Optical study has been done by using UV-visible spectroscopy and a decrease in band gap was observed with the chromium doping. I-V characteristics have been studied at room temperature for the synthesized material. The resistive switching effectfor synthesized material is confirmed by applying negative and positive bias voltage for which current shows differentvalues. CrFeO3 shows a larger loop of hysteresis as compared to α-Fe2O3 confirming a better material for ReRAM application.