Please use this identifier to cite or link to this item: http://nopr.niscpr.res.in/handle/123456789/64321
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dc.contributor.authorKumar, Nitin-
dc.contributor.authorMeena, Mahesh C-
dc.contributor.authorYadav, Harshmani-
dc.contributor.authorKumar, Umesh-
dc.contributor.authorJewariya, Mukesh-
dc.date.accessioned2024-08-05T09:56:55Z-
dc.date.available2024-08-05T09:56:55Z-
dc.date.issued2024-08-
dc.identifier.issn0975-0959 (Online); 0301-1208 (Print)-
dc.identifier.urihttp://nopr.niscpr.res.in/handle/123456789/64321-
dc.description718-721en_US
dc.description.abstractThe electron paramagnetic resonance (EPR) spectrum of nitrogen implanted SnO2 thin films have been study. An isotropic g (gyromagnetic ratio) tensor is observed and calculated for all Samples (viz. as deposited and for different concentration of nitrogen in SnO2). The different g values are attributed to the different concentration of paramagnetic species. With the increase in doping of nitrogen from 2% to 6%, the substitution of oxygen vacancies and interstitial atom in electronic structure is also observed. This is confirmed by absorption spectrum recorded by UV Visible.en_US
dc.language.isoenen_US
dc.publisherNIScPR-CSIR,Indiaen_US
dc.sourceIJPAP Vol.62(08) [August 2024]en_US
dc.subjectElectron paramagnetic resonanceen_US
dc.subjectIsotropicen_US
dc.subjectIsotropicen_US
dc.subjectSnO2en_US
dc.titleParamagnetism in Nitrogen Implanted SnO2 by Low Energy Ion beam Irradiationen_US
dc.typeArticleen_US
dc.identifier.doihttps://doi.org/10.56042/ijpap.v62i8.7366en_US
Appears in Collections:IJPAP Vol.62(08) [August 2024]

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