Please use this identifier to cite or link to this item: http://nopr.niscpr.res.in/handle/123456789/66319
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dc.contributor.authorDutt, Anju-
dc.contributor.authorSingh, Harpreet-
dc.contributor.authorSangeeta-
dc.contributor.authorGrover, Sandeep-
dc.contributor.authorKumar, Anand-
dc.date.accessioned2025-08-08T11:45:14Z-
dc.date.available2025-08-08T11:45:14Z-
dc.date.issued2025-08-
dc.identifier.issn0975-1041 (Online);0019-5596 (Print)-
dc.identifier.urihttp://nopr.niscpr.res.in/handle/123456789/66319-
dc.description684-691en_US
dc.description.abstractThe present work reports the effect of sandwiched layer thickness on the structural, electrical, and optical properties of the (Cu, Al)-SnO2/Ag/(Cu, Al)-SnO2 (CAT/Ag/CAT) structures deposited by the E-beam evaporation technique on the glass substrate. The morphology of the Ag layer with increasing thickness affects the electrical and optical properties of the multilayer structure. The formation of Ag islands is confirmed by Field Emission Scanning Electron Microscope (FESEM) techniques, which follow the Volmer-Weber island growth mechanism. The multilayer structure with a 16 nm Ag thickness exhibits the highest transmittance and lowest resistivity, i.e., 84.75% and 3.24 × 10-5 Ω-cm, respectively. The Hackke figure of merit is calculated, and the CAT/Ag(16 nm)/CAT multilayer structure shows the best figure of merit of 4.48 × 10-2 Ω-1.en_US
dc.language.isoenen_US
dc.publisherNIScPR-CSIR, Indiaen_US
dc.sourceIJPAP Vol.63(08) [August 2025]en_US
dc.subjectMultilayer structureen_US
dc.subjectTransparent Conducting Oxideen_US
dc.subjectMorphologyen_US
dc.subjectSandwich layer thicknessen_US
dc.subjectOptoelectronics applicationsen_US
dc.titleVariation of Structural, Optical, and Electrical properties of CuAl-SnO2/Ag/CuAl- SnO2 with Ag Layer Thicknessen_US
dc.typeArticleen_US
dc.identifier.doihttps://doi.org/10.56042/ijpap.v63i8.17176en_US
Appears in Collections:IJPAP Vol.63(08) [August 2025]

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