Please use this identifier to cite or link to this item: http://nopr.niscpr.res.in/handle/123456789/7565
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dc.contributor.authorSingh, Sukhvir-
dc.contributor.authorSrivastava, A K-
dc.contributor.authorLal, K-
dc.contributor.authorTomokiyo, Y-
dc.contributor.authorSharma, S K-
dc.contributor.authorKishore, R-
dc.date.accessioned2010-03-08T09:49:30Z-
dc.date.available2010-03-08T09:49:30Z-
dc.date.issued2006-08-
dc.identifier.issn0975-1017 (Online); 0971-4588 (Print)-
dc.identifier.urihttp://hdl.handle.net/123456789/7565-
dc.description339-346en_US
dc.description.abstractThin films of InSb nanocrystals have been deposited onto KCl substrate using a thermal evaporation technique under high vacuum conditions (~10-6 torr). An intriguing microstructure consisted of moiré fringes with variable spacings and a corresponding variety of electron diffraction patterns in reciprocal space are reported at the deposition temperature of 373 K. The nanograins of InSb with preferred orientation and faceted morphology are delineated. A possible mechanism has been postulated to explain the evolution of such microstructures. It has been noticed that there is a peculiarity in the resistivity characteristics and infrared transmittance measurements obtained on these films. A set of electron micrographs, diffraction patterns and properties have been evaluated and discussed to understand the role of nanocrystals constituting the thin film, and certain types of defects introduced in the microstructure while deposition, on these properties.en_US
dc.language.isoen_USen_US
dc.publisherCSIRen_US
dc.relation.ispartofseriesH01C17/075en_US
dc.sourceIJEMS Vol.13(4) [August 2006]en_US
dc.titleMicrostructural features, electrical and optical properties of nanostructured InSb thin films deposited at 373 Ken_US
dc.typeArticleen_US
Appears in Collections:IJEMS Vol.13(4) [August 2006]

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