Effect of temperature on non-linear optical properties of InGaAs/GaAs single quantum dot

Abstract

Based upon the semi-classical density matrix approach, a detailed theoretical investigation has been made to analyze the effect of temperature on non-linear optical properties of InGaAs/GaAs single quantum dot (QD). The temperature effects have been incorporated via temperature dependent (i) dephasing mechanism, (ii) band gap energy and (iii) population density. The semiconductor QD has been chosen to be small enough such that the confinement effect dominates over the Coulombic contribution. Detailed numerical estimates of the non-linear refraction and absorption properties have been made. Redshifts of the non-linear refraction and absorption peaks as well as reduction in the induced polarization are found to occur with increasing temperature. The present analysis further reveals that the non-linear gain reduces at higher temperature.