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http://nopr.niscpr.res.in/handle/123456789/8335Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | De, S S | - |
| dc.contributor.author | Ghosh, A K | - |
| dc.contributor.author | Ghosh, T K | - |
| dc.contributor.author | Jana, D | - |
| dc.date.accessioned | 2010-04-26T04:55:28Z | - |
| dc.date.available | 2010-04-26T04:55:28Z | - |
| dc.date.issued | 2006-07 | - |
| dc.identifier.issn | 0975-1041 (Online); 0019-5596 (Print) | - |
| dc.identifier.uri | http://hdl.handle.net/123456789/8335 | - |
| dc.description | 543-547 | en_US |
| dc.description.abstract | A model has been developed to investigate the heat generation processes in semiconductor devices under heavily doped condition. The equilibrium between heat generation and heat dissipation by various mechanisms has been studied. The variations of heat dissipation with the change of carrier concentrations and the heat along the distance from the junction to the bulk have been estimated by numerical analyses. These are shown graphically with the results of an earlier work. | en_US |
| dc.language.iso | en_US | en_US |
| dc.publisher | CSIR | en_US |
| dc.relation.ispartofseries | H01L21/00 | en_US |
| dc.source | IJPAP Vol.44(07) [July 2006] | en_US |
| dc.subject | Thermal properties | en_US |
| dc.subject | Semiconductor devices | en_US |
| dc.subject | Energy conversion | en_US |
| dc.title | Effective heating in heavily doped semiconductor devices | en_US |
| dc.type | Article | en_US |
| Appears in Collections: | IJPAP Vol.44(07) [July 2006] | |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| IJPAP 44(7) 543-547.pdf | 156.28 kB | Adobe PDF | View/Open |
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