Pulse height defect in ion implanted silicon detector for heavy ions with <i style="">Z</i> = 6-28 in the energy range ~ 0.25-2.5 MeV/u

Abstract

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The response of ion implanted silicon detector has been studied for heavy ions with Z = 6-28 in the energy range ~ 0.25 - 2.5 MeV/u utilizing the 15UD Pelletron accelerator facility at Nuclear Science Centre, New Delhi, India. The variation of pulse height in ion implanted silicon detector with projectile’s atomic number and its energy have been investigated. It has been observed that pulse height-energy calibration for a given projectile is described well by a linear relationship indicating no pulse height defect with the variation in energy for specific <i style="">Z</i> projectile. Pulse height defect has been found to increase with increasing projectile atomic number. The mean slope of the collected charge signal versus projectile energy depends significantly on the atomic number of the projectile.

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