Please use this identifier to cite or link to this item: http://nopr.niscpr.res.in/handle/123456789/19925
Title: Structural, optical and electrical properties of (V2O5)1-x-(MoO3)x thin films
Authors: Prameela, Ch
Anjaiah, M
Murthy, K Krishna
Srinivasarao, K
Keywords: Mixed oxide thin films;Flash evaporation;Characterization
Issue Date: Aug-2013
Publisher: NISCAIR-CSIR, India
Abstract: Thin films of V2O5, MoO3 and (V2O5)1-x-(MoO3)x were deposited on to glass and p-Si (1 0 0) substrates by flash evaporation technique at the substrate temperatures of 300 K and 500 K at a fixed oxygen partial pressure of 5´10-4 mbar. These deposited films were characterized by XRD, IR, UV VIS spectra. The structure of (V2O5)1-x-(MoO3)x films is found to be amorphous for x= 0.5. The IR spectra confirm the formation of (V2O5)1-x-(MoO3)x mixed oxide films for 0<x<1. The energy gaps of the mixed oxide films are in between 2.1 to 2.56 eV. The width of localized states is 0.92 eV (for x=0). The electrical conductivity of the V2O5 films is 2´10-3 ohm-1 cm-1 and decreases with increasing the MoO3 concentration in (V2O5)1-x-(MoO3)x thin films.
Page(s): 563-568
ISSN: 0975-1041 (Online); 0019-5596 (Print)
Appears in Collections:IJPAP Vol.51(08) [August 2013]

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