Please use this identifier to cite or link to this item:
http://nopr.niscpr.res.in/handle/123456789/24413| Title: | Charge conduction process and rectification effect in ITO/doped PPy/Ag device |
| Authors: | Roy, M S Jaiswal, Pratibha Manmeeta Saxena, Dhiraj Sharma, G D |
| Issue Date: | Oct-2000 |
| Publisher: | NISCAIR-CSIR, India |
| Abstract: | Electrical, impedance and photovoltaic measurements with a thin film of PMB doped PPy and undoped PPy , using sandwich between Ag and ITO are explained in terms of p-type semiconducting behaviour of PMB doped-PPy (PMB:PPy) film and by the formation of Schottky barrier with Ag and ohmic contact with ITO. At low voltage region Ohm's law is followed, while at high voltage region a space charge limited conduction is observed which is controlled by the exponential trap distribution. |
| Page(s): | 282-286 |
| Appears in Collections: | IJEMS Vol.07(5-6) [October-December 2000] |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| IJEMS 7(5-6) 282-286.pdf | 984.57 kB | Adobe PDF | View/Open |
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