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http://nopr.niscpr.res.in/handle/123456789/24425| Title: | On the evaluation of Schottky barrier diode parameters of Pd, Au and Ag/n-GaAs |
| Authors: | Jayavel, P Kumar, J Ramasam, P Premanand, R |
| Issue Date: | Oct-2000 |
| Publisher: | NISCAIR-CSIR, India |
| Abstract: | Forward Voltage - Current (V- I) characteristics are generally used to investigate the Schottky barrier diode parameters, viz., barrier height, ideality factor and series resistance. This method requires a linear region (v > 3kT l q) in the In (I) vs V characteristics. When a metal-semiconductor con tact exhibits relatively high series resistance, it is difficult to determine a linear region in these forward characteristics. Therefore, one can also consider the reverse part of the VI characteristics. Investigations are reponed here on Pd, Au and Ag/n-GaAs Schottky barrier diode parameters under the whole bias range of the VI characteristics. The theoretical and experimental results are compared and discussed. |
| Page(s): | 340-343 |
| Appears in Collections: | IJEMS Vol.07(5-6) [October-December 2000] |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| IJEMS 7(5-6) 340-343.pdf | 777.71 kB | Adobe PDF | View/Open |
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