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http://nopr.niscpr.res.in/handle/123456789/24426| Title: | Grain growth studies of Al doped ZnO-Bi2O3 - SiO2 (0.4-0.6 mol %) varistors |
| Authors: | Goel, R Sil, A Anand, H R Prabhakar, S R |
| Issue Date: | Oct-2000 |
| Publisher: | NISCAIR-CSIR, India |
| Abstract: | Grain growth of ZnO in the system ZnO- Bi2O3(0.5 mol % )-SiO2 (0.4-0.6 mol % )-AI (0.0125 mol %) is reported here for the samples sintered at temperatures 1000-1250°C for 0.5-2 h. These results are compared with our previous studies onZnO- Bi2O3(0.5mol %)-SiO2 (0.4-0.6 mol %) in terms of kinetic grain growth expression : Gn- Gn o = Ko t exp(-Q/RT). It has been observed that due to addition of AI, there is not much change in the values of grain growth exponent (n ). However, the n value decreases with increasing percentage of silica, whereas the activation energy (Q) increases. The impedance analysis shows that upon addition of even a small amount of AI, the grain resistance decreases to a large extent thereby improving the electrical characteristics by increasing the differential conductance between the grain and the grain boundary. |
| Page(s): | 344-349 |
| Appears in Collections: | IJEMS Vol.07(5-6) [October-December 2000] |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| IJEMS 7(5-6) 344-349.pdf | 1.25 MB | Adobe PDF | View/Open |
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