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http://nopr.niscpr.res.in/handle/123456789/24427| Title: | Growth kinetics of III -V compound semiconductors |
| Authors: | Dhanasekaran, R Ramasamy, P |
| Issue Date: | Oct-2000 |
| Publisher: | NISCAIR-CSIR, India |
| Abstract: | In the present communication, the recent developments in the growth kinetics of vapour phase epitaxy, liquid phase epitaxy and liquid phase electroepitaxy of III-V compound semiconductors have been reviewed. Investigations on the nucleation and growth mechanism of III-V binary, ternary and quaternary compounds grown from VPE are presented, compared with the available experimental results and there is a good agreement between them. Computer simulation technique has been used to construct the concentration profiles of the solute atoms present in front of the crystal-solution interface during the Liquid Phase Epitaxy and Liquid Phase Electroepitaxy of III-V binary, ternary and quaternary compound semiconductors. The growth rate of the materials and hence the thickness of the grown films have also been determined. |
| Page(s): | 350-353 |
| Appears in Collections: | IJEMS Vol.07(5-6) [October-December 2000] |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| IJEMS 7(5-6) 350-353.pdf | 917.91 kB | Adobe PDF | View/Open |
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