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http://nopr.niscpr.res.in/handle/123456789/24443| Title: | Influence of substrate temperature on the physical properties of reactive evaporated indium oxide films |
| Authors: | Krishna, B Radha Subramanyam, T K Naidu, B Srinivasulu Uthanna, S |
| Issue Date: | Oct-2000 |
| Publisher: | NISCAIR-CSIR, India |
| Abstract: | Indium oxide thin films were deposited on glass substrates at 373-673 K by reactive evaporation of indium in an oxygen partial pressure of 2× 10-4 mbar. The films formed at 373 K were mixed phase of indium and indium oxide where as those formed at temperatures ≥ 473 K were single phase of indium oxide. The electrical resistivity of the films formed at 373 K was high (3.7× 10-1 Ω cm) due to their amorphous nature. When the substrate temperature was increased to 673 K. electrical resistivity dec reased to 4.2× 10-3 Ω cm due to improvement in the degree of crystallinity of the films. The Hall mobility of these films increased from 2 cm2/V sec to 10 cm2/V sec with the increase of substrate temperature (423-673 K). The temperature dependence of Hall mobility indicated that the grain boundary scattering of the charge carriers was predominant electrical transport in these films. The optical band gap of the films increased from 3.65 eV to 3.76 eV with the increase of substrate temperature from 473 K to 673 K, respectively. |
| Page(s): | 395-398 |
| Appears in Collections: | IJEMS Vol.07(5-6) [October-December 2000] |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| IJEMS 7(5-6) 395-398.pdf | 854.12 kB | Adobe PDF | View/Open |
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