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http://nopr.niscpr.res.in/handle/123456789/25462| Title: | Studies on deposition of antimony triselenide thin films by chemical method: SILAR |
| Authors: | Sankapal, B R Ganesan, V Lokhande, C D |
| Issue Date: | Aug-2000 |
| Publisher: | NISCAIR-CSIR, India |
| Abstract: | Thin film of Sb2Se3 have been deposited using a simple and less investigated chemical method namely, successive ionic layer adsorption and reaction (SILAR). The preparative parameters such as concentration, number of immersions, immersion time etc, are optimized to get good quality and well adherent Sh2Sc, thin films. The film are characterized by means of X-ray diffraction, scanning electron microscopy (SEM), atomic force microscopy (AFM), optical absorption and electrical measurements, XRD study shows that films are of Sb2Se3 with orthorhomhic crystal structure. SEM and AFM images show that films are nanocrystalline. The optical bandgap is estimated to be 1.8eV. The room temperature dark electrical resistivity is of the order of 105 Ωcm. |
| Page(s): | 606-610 |
| ISSN: | 0975-1041 (Online); 0019-5596 (Print) |
| Appears in Collections: | IJPAP Vol.38(08) [August 2000] |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| IJPAP 38(8) 606-610.pdf | 928.62 kB | Adobe PDF | View/Open |
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