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http://nopr.niscpr.res.in/handle/123456789/27074| Title: | Preparntion and characterization of chemically deposited As2S3 thin films |
| Authors: | Mane, R S Lokhande, B J Uplane, M D Lokhande, C D |
| Issue Date: | Mar-1999 |
| Publisher: | NISCAIR-CSIR, India |
| Abstract: | A method for chemical bath deposition of As2S3 thin films in an aqueous acidic medium is described. As2O3, was used as As3+ ion source and thioacetamide as a S2- ion source. Sodium salt of ethylene diamine tetracetic acid was used as a complexing agent for As2O3. The preparative parameters like solution concentration, volume of sulphur ion source etc. have been optimized. X-ray diffraction, SEM, optical absorption, electrical resistivity, etc. are used to characterize the films. |
| Page(s): | 196-198 |
| ISSN: | 0975-1041 (Online); 0019-5596 (Print) |
| Appears in Collections: | IJPAP Vol.37(03) [March 1999] |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| IJPAP 37(3) 196-198.pdf | 2.56 MB | Adobe PDF | View/Open |
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