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http://nopr.niscpr.res.in/handle/123456789/27196| Title: | Growth morphology and compositional analysis of InxGa1-xSb crystals-grown by vertical directional solidification technique |
| Authors: | Gadkari, D B Shashidharan, P Lal, K B Gokhale, N A Shah, A P Arora, B M |
| Issue Date: | Sep-1999 |
| Publisher: | NISCAIR-CSIR, India |
| Abstract: | InxGa1-xSb (x= 0.5) single crystals of 12 mm diameter and 50-60 mm length have been grown from stoichiometric source materials by using vertical directional solidification technique. The optimized growth conditions are ampoule translation velocity 0.84μm/sec, rotation speed 10 rpm and ampoule with argon pressure (100 torr). The axial compositional profile has been determined by Vegard-law and showed mixing of the melt. Hall measurements reveal the conversion of n-type to p-type conduction along the growth axis and vice versa. Radial resistivity measurements by four probe exhibited the nearly homogeneous growth . The growth morphology was attributed to the intrinsic crystallographic microstructures. |
| Page(s): | 652-656 |
| ISSN: | 0975-1041 (Online); 0019-5596 (Print) |
| Appears in Collections: | IJPAP Vol.37(09) [September 1999] |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| IJPAP 37(9) 652-656.pdf | 1.06 MB | Adobe PDF | View/Open |
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