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http://nopr.niscpr.res.in/handle/123456789/29733| Title: | Study of compositional and diffusion effect in CdxZn1-xS sintered films |
| Authors: | Singh, V Kumar, Vipin |
| Issue Date: | Aug-1997 |
| Publisher: | NISCAIR-CSIR, India |
| Abstract: | H-VI Semiconductors are of great importance due to their applications in various electro-optic devices. CdS is a suitable window material for CdS/CdTe and CdS/Cu2S heterojunction solar cells. ZnS with band gap 3.54 eV can be substituted into CdS to increase the band gap of window material. The use of CdxZn1-xS in place of Cd permits a greater open circuit voltage. On preparation of the sintered film of CdXZn1-XS, the problem of diffusion arises, which disturbs the stoichiometry of the film. Here, methods have been suggested to preserve stoichiometry and minimize the diffusion problem in preparation of sintered films. |
| Page(s): | 163-165 |
| ISSN: | 0975-1017 (Online); 0971-4588 (Print) |
| Appears in Collections: | IJEMS Vol.04(4) [August 1997] |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| IJEMS 4(4) 163-165.pdf | 183.08 kB | Adobe PDF | View/Open |
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