Please use this identifier to cite or link to this item:
http://nopr.niscpr.res.in/handle/123456789/29740| Title: | Determination of interface state density of metal-semiconductor field effect transistors |
| Authors: | Chattopadhyay, P Majumdar, L |
| Issue Date: | Oct-1997 |
| Publisher: | NISCAIR-CSIR, India |
| Abstract: | A method for the determination of the interface state density of a metal-semiconductor field effect transistor is developed which requires an analysis of the temperature dependence of threshold voltage over a certain range of temperature. The method is used to estimate the values of interface state densities of GaAs MESFETs from the available experimental data on threshold voltage in the literature. |
| Page(s): | 220-224 |
| ISSN: | 0975-1017 (Online); 0971-4588 (Print) |
| Appears in Collections: | IJEMS Vol.04(5) [October 1997] |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| IJEMS 4(5) 220-224.pdf | 344.63 kB | Adobe PDF | View/Open |
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