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http://nopr.niscpr.res.in/handle/123456789/29796| Title: | Fabrication of p+ implanted shallow junctions with TiSi2 in Si MOS structure |
| Authors: | Jana, T Bose, D N Subrahmanyam, P V S |
| Issue Date: | Aug-1996 |
| Publisher: | NISCAIR-CSIR, India |
| Abstract: | The paper describes junction formation in p-Si by p+ ion implantation with TiSi2 as contact material p+ implanted shallow junctions with TiSi2 have been formed by three different processes Implantation (i) through Ti layer, (ii) through TiSi2 and (iii) directly into crystalline Si. A characterization of TiSi2 has been carried out using X-ray diffraction and X-ray photoelectron spectroscopy. 1-V and C-V characteristics of the junctions show that the first type of structure has the best properties, i.e., lowest ideality factor (n= 1.47-1.95) and dark current. The first process yields best devices because of lower defect concentration near the junction formation by ion implantation. |
| Page(s): | 148-151 |
| ISSN: | 0975-1017 (Online); 0971-4588 (Print) |
| Appears in Collections: | IJEMS Vol.03(4) [August 1996] |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| IJEMS 3(4) 148-151.pdf | 266.58 kB | Adobe PDF | View/Open |
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