Please use this identifier to cite or link to this item:
http://nopr.niscpr.res.in/handle/123456789/46877| Title: | A new technique to measure flat band potential and barrier height at a desired surface charge of n- and p-semiconductors |
| Authors: | Sharon, Maheshwar Prasad, B M Basavaswaran, K |
| Issue Date: | Nov-1989 |
| Publisher: | NISCAIR-CSIR, India |
| Abstract: | A new technique to measure surface conductivity has been developed. This technique which can be used with either a thin film or a pellet can also provide information on (i) flat-band potential at a desired pH, (ii) barrier height developed at the interface of semiconductor-electrolyte at any desired pH and (iii) flat-band potential at a desired surface charge present at the semiconductor. A model has been developed to explain the mechanism of surface conductivity of a semiconductor, such as ɑ-Fe2O3 or n-SnS or p-SnSe. |
| Page(s): | 935-941 |
| ISSN: | 0975-0975(Online); 0376-4710(Print) |
| Appears in Collections: | IJC-A Vol.28A(11) [November 1989] |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| IJCA 28A(11) 935-941.pdf | 3.43 MB | Adobe PDF | View/Open |
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